Date of Award


Document Type


Degree Name

Master of Science (MS)


Electrical Engineering

First Advisor

Tian Xia


Memory design plays an important role in modern computer technology in regard

to overall performance and reliability. Prior memory technologies, including magneticcore

memory, hard disk drives, DRAM, SRAM have limitations in regard to bit density,

IC integration, power efficiency, and physical size, respectively. To address these

limitations we propose to develop a magnetic graphene random access memory (MGRAM)

utilizing graphene Hall effect, which takes advantage of the inherent reliability of magnetic

memory and superior electrical properties of graphene (high carrier mobility, zero-band

gap, high Hall sensitivity). As the graphene magnetic memory device will be integrated

with a CMOS ASIC design an analog circuit model for the MGRAM cell is necessary and

important. In this study the electrical circuit model is developed utilizing the analog circuit

modeling language Verilog-A.

The electrical circuit model characterizes the graphene electrical properties and

the ferromagnetic core magnetic properties that retains the bit-state value. MGRAM device

simulations studying varying coil width, height, radius, contact pad configuration,

graphene shape, is performed with the MagOasis Magsimus tool to evaluate the device

performance. Model results show a maximum Hall effect voltage of 100mV for a bias

current of 50uA with a 1 Tesla magnetic field, and a writing speed of 6-9ns for setting the

magnetic state. These results will be validated against the circuit hardware measurement

and will be used for model refinement.



Number of Pages

74 p.