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28/39 GHz Dual-Band GaN Power Amplifier Design

Chakraborty, Swarup
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Abstract
In this paper, a 28 GHz/39 GHz dual-band mono- lithic microwave integrated circuit (MMIC) gallium nitride (GaN) power amplifier has been proposed for the long-range millimeter- wave radar and 5G communication applications. The amplifier integrates a driver and a power circuit, utilizing a commercial GaN technology. Unique low-loss dual frequency matching circuits are employed to ensure high efficiency at the desired output power. The simulation results show that the power amplifier achieves a saturated output power of above 30 dBm at both frequencies, with a power-added efficiency (PAE) exceeding 35%.
Description
Date
1/1/2026
Student Status
Graduate Student
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Type of presentation
Poster
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UVM Student Research Conference
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URI
https://hdl.handle.net/20.500.14849/10205
DOI
Advisor(s)
Tian Xia
Department
Program/Major
Electrical and Electronics Engineering
College/School
College of Engineering and Mathematical Sciences
Organization
Research Category
Engineering
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