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Memristive switching behavior in Nb2O5 – SnO2 alloys

Cooney, Maddy
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Two terminal metal/ insulator/ metal (MIM) devices with negative differential resistance (NDR) and electrical switching characteristics have transformative applications in neuromorphic computing due to their threshold switching behavior, simplicity of fabrication, and high energy efficiency. We deposit Nb2O5, a material that has previously shown NDR behavior, using atomic layer deposition (ALD), which allows exquisite thickness and compositional control of deposited thin films. We use this approach to alloy SnO2 into our Nb2O5 thin films to both reduce voltage switching thresholds and to modulate high and low resistance states.
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Undergraduate
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2025-05-29
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UVM Student Research Conference
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https://hdl.handle.net/20.500.14849/9052
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