Design and Layout of Silicon on Insulator (SoI) GaN MEMS Resonators
Anderson, Ryan
Anderson, Ryan
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Abstract
Gallium Nitride (GaN) semiconductor devices have promise for high efficiency, power and switching speeds while offering reduced heat generation and more compact designs when compared to silicon microelectronics. This has made GaN high electron mobility transistors (HEMTs) attractive for power conversion circuits. One class of power converters use resonators to store energy and enable soft switching, improving converter efficiency. Piezoelectric microelectromechanical resonators, realized in GaN, are known to be advantageous as they can operate with a higher quality factor at small dimension than purely electronic (LC) resonators. Small dimension GaN resonators can enhance efficiency while saving space to protect sensitive devices. This research focuses on the design and layout for Lamb mode GaN resonators in the IMEC's GaN-on-SOI process. IMEC is a leading research and innovation center for nanoelectronics and digital technology. The process design kit has been implemented in the Vermont Advance Computing Center (VACC). Based on optimized geometry from previous finite element simulations, design-rule compliant GaN resonators are created for future fabrication via IMECs multi-project wafer service.
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Date
01/01/2026
Student Status
Senior (Graduating in 2026)
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Poster
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Program/Major
Electrical Engineering
College/School
College of Engineering and Mathematical Sciences
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Engineering