Deposition and Annealing of RF-Sputtered, Thin Film Gallium Oxide
Lindberg, Aria
Lindberg, Aria
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Abstract
This research is a subset of a broader project which seeks to develop RF-sputtered Ga2O3 (gallium oxide) resonators. By RF sputtering thin-film Ga2O3 on silicon wafers and then annealing small samples of the wafer at different temperatures, the effects of temperature on surface morphology, crystallographic phase, and sample uniformity can be documented and utilized in further research in Ga2O3 resonator development. Samples of uniform thickness are annealed at temperatures ranging from 500 to 900 degrees Celsius and subsequently measured to determine changes in surface roughness, uniformity, and crystal structure. In future work, other variables such as wafer substrate, varied deposition parameters (including temperature, pressure, time, and gas ratio), and varied anneal parameters will be used to more completely characterize RF-sputtered and temperature-treated Ga2O3.
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Date
1/1/2026
Student Status
Senior (Graduating in 2026)
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Poster
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Program/Major
Electrical Engineering
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College of Engineering and Mathematical Sciences
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Engineering