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Development and characterization of thin film materials produced via atomic layer deposition

Rekas, William
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Abstract
Atomic Layer Deposition, (ALD), is a method for growing thin film materials with atomic scale precision. Sequential alternating pulses of metal organics and oxidation precursors enter a reaction chamber and form a film on the surface of a substrate. Using ALD, I produced and characterized thin films of Al2O3, SnO2, Nb2O5 and alloys of the latter two. I will discuss various temperature variations, oxidation precursors and their effect on the growth and optical characteristics of the aforementioned films. I will also evaluate the effect the alloyed SnO2 and Nb2O5 have on perovskite solar cell performance.
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Date
2025-05-29
Student Status
Undergraduate
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Type of presentation
Oral Paper Presentation
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UVM Student Research Conference
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URI
https://hdl.handle.net/20.500.14849/9046
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Advisor(s)
Alex Kozen
Department
Program/Major
Physics
College/School
College of Engineering and Mathematical Sciences
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Physical Science
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