Development and characterization of thin film materials produced via atomic layer deposition
Rekas, William
Rekas, William
Citations
Altmetric:
License
License
DOI
Abstract
Atomic Layer Deposition, (ALD), is a method for growing thin film materials with atomic scale precision. Sequential alternating pulses of metal organics and oxidation precursors enter a reaction chamber and form a film on the surface of a substrate. Using ALD, I produced and characterized thin films of Al2O3, SnO2, Nb2O5 and alloys of the latter two. I will discuss various temperature variations, oxidation precursors and their effect on the growth and optical characteristics of the aforementioned films. I will also evaluate the effect the alloyed SnO2 and Nb2O5 have on perovskite solar cell performance.
Description
Date
2025-05-29