Impact of annealing on the structural, optical, and electrical properties of atomic layer deposited aluminum-doped zinc oxide
Ritter, Max
Ritter, Max
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Abstract
The effect of annealing under ambient conditions on atomic layer deposited Al-doped zinc oxide is discussed. ALD produces amorphous films, but nanocrystalline structure is necessary for device applications, and anneal treatment has promise to achieve the desired material properties. Anneals were conducted for one-, two-, and three-hour durations over the range of 250-350?C and then characterized via Raman spectroscopy, ellipsometry, and four point-probe data. Qualitative analysis shows anneal treatment increases crystallinity and potentially increases carrier concentration in AZO but most likely decreases the mobility at higher temperature anneals (>300?C). Literature states there is promise to annealing under vacuum to improve the electronic properties of AZO by increasing oxygen vacancies in the lattice.
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Date
1/1/2026
Student Status
Senior (Graduating in 2026)
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Poster
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Physics
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College of Engineering and Mathematical Sciences
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Physical Science