Temperature Dependent Charge Transport Characteristics of Ferroelectric Organic Field Effect Transistors
Conference Year
January 2020
Abstract
This presentation will outline my recent research in ferroelectric organic field-effect transistor (Fe-OFET) fabrication. This research took a top-gate bottom-contact OFET design I had previously used and adapted it to suit Fe-OFETs through the introduction of a P(VDF-TrFE) dielectric layer. I will present my experimental methodology that led to the successful fabrication of Fe-OFETs. This will be followed by the results I found in the characterization of these transistors. These results include measurements taken at room temperature as well as temperature dependent measurements, where one of my samples was cooled and heated under high vacuum. Together, these results provide insight into the temperature dependence of the charge transport mechanisms present in the transistors I fabricated.
Primary Faculty Mentor Name
Randall Headrick
Graduate Student Mentors
Jing Wan, Yang Li
Faculty/Staff Collaborators
Jing Wan (Graduate Student Mentor), Yang Li (Graduate Student Mentor), Chad Miller (Postdoctoral Mentor)
Status
Undergraduate
Student College
College of Agriculture and Life Sciences
Second Student College
College of Arts and Sciences
Program/Major
Physics
Second Program/Major
Mathematics
Primary Research Category
Engineering & Physical Sciences
Temperature Dependent Charge Transport Characteristics of Ferroelectric Organic Field Effect Transistors
This presentation will outline my recent research in ferroelectric organic field-effect transistor (Fe-OFET) fabrication. This research took a top-gate bottom-contact OFET design I had previously used and adapted it to suit Fe-OFETs through the introduction of a P(VDF-TrFE) dielectric layer. I will present my experimental methodology that led to the successful fabrication of Fe-OFETs. This will be followed by the results I found in the characterization of these transistors. These results include measurements taken at room temperature as well as temperature dependent measurements, where one of my samples was cooled and heated under high vacuum. Together, these results provide insight into the temperature dependence of the charge transport mechanisms present in the transistors I fabricated.