Presentation Title

Temperature Dependent Charge Transport Characteristics of Ferroelectric Organic Field Effect Transistors

Presenter's Name(s)

Jared C. BensonFollow

Project Collaborators

Jing Wan (Graduate Student Mentor), Yang Li (Graduate Student Mentor), Chad Miller (Postdoctoral Mentor)

Abstract

This presentation will outline my recent research in ferroelectric organic field-effect transistor (Fe-OFET) fabrication. This research took a top-gate bottom-contact OFET design I had previously used and adapted it to suit Fe-OFETs through the introduction of a P(VDF-TrFE) dielectric layer. I will present my experimental methodology that led to the successful fabrication of Fe-OFETs. This will be followed by the results I found in the characterization of these transistors. These results include measurements taken at room temperature as well as temperature dependent measurements, where one of my samples was cooled and heated under high vacuum. Together, these results provide insight into the temperature dependence of the charge transport mechanisms present in the transistors I fabricated.

Primary Faculty Mentor Name

Randall Headrick

Graduate Student Mentors

Jing Wan, Yang Li

Status

Undergraduate

Student College

College of Agriculture and Life Sciences

Program/Major

Physics

Primary Research Category

Engineering & Physical Sciences

Second College (optional)

College of Arts and Sciences

Second Program/Major

Mathematics

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Temperature Dependent Charge Transport Characteristics of Ferroelectric Organic Field Effect Transistors

This presentation will outline my recent research in ferroelectric organic field-effect transistor (Fe-OFET) fabrication. This research took a top-gate bottom-contact OFET design I had previously used and adapted it to suit Fe-OFETs through the introduction of a P(VDF-TrFE) dielectric layer. I will present my experimental methodology that led to the successful fabrication of Fe-OFETs. This will be followed by the results I found in the characterization of these transistors. These results include measurements taken at room temperature as well as temperature dependent measurements, where one of my samples was cooled and heated under high vacuum. Together, these results provide insight into the temperature dependence of the charge transport mechanisms present in the transistors I fabricated.