Presentation Title
Electrochemical Self-Assembly of CuSCN/4-(N,N-dimethylamino)-4’-(N’-methyl)Stilbazolium Hybrid Thin Films
Abstract
We have achieved electrochemical self-assembly (ESA) of inorganic / organic hybrid thin films combining CuSCN, a wide bandgap p-type semiconductor, and 4-N,N-dimethylamino-4’-N’-methylstilbazolium, as its salt with tosylate (DAST) is known to exhibit second-order nonlinear optical properties. Switching of dye loading mechanism has been suggested, depending on DAST concentration in the bath [1]. In low concentration range, the loading is limited by diffusion so that DAS+ is entrapped within CuSCN crystal grains, while surface reaction of hybridization begins to limit the dye loading in high concentration range, resulting in formation of unique nanostructures as well as phase separation of inorganic and organic domains [1]. In this study, ESA of CuSCN/DAS hybrid thin films has been carried out on systematic variation of bulk concentrations of [Cu(SCN)]+, DAST and their flux density by changing angular speed of rotation of the rotating disk electrode. The switching has been found to occur at the concentration ratio [Cu(SCN)]+/DAST = ca. 31, above and below which are the loading diffusion and surface reaction limited, respectively [2].
[1] Y. Tsuda et al., Monatsh. Chem., 148, 845-854 (2017).
[2] Y. Tsuda et al., J. Electrochem. Soc., 166 (9) B3096-B3102 (2019).
Primary Faculty Mentor Name
Matthew White
Faculty/Staff Collaborators
Toru Suzuki, Tensho Nakamura, Kyota Uda, Shuji Okada, Ryohei Yamakado, Philipp Stadler, Matthew White, Tsukasa Yoshida*
Status
Graduate
Student College
Graduate College
Program/Major
Physics
Primary Research Category
Engineering & Physical Sciences
Electrochemical Self-Assembly of CuSCN/4-(N,N-dimethylamino)-4’-(N’-methyl)Stilbazolium Hybrid Thin Films
We have achieved electrochemical self-assembly (ESA) of inorganic / organic hybrid thin films combining CuSCN, a wide bandgap p-type semiconductor, and 4-N,N-dimethylamino-4’-N’-methylstilbazolium, as its salt with tosylate (DAST) is known to exhibit second-order nonlinear optical properties. Switching of dye loading mechanism has been suggested, depending on DAST concentration in the bath [1]. In low concentration range, the loading is limited by diffusion so that DAS+ is entrapped within CuSCN crystal grains, while surface reaction of hybridization begins to limit the dye loading in high concentration range, resulting in formation of unique nanostructures as well as phase separation of inorganic and organic domains [1]. In this study, ESA of CuSCN/DAS hybrid thin films has been carried out on systematic variation of bulk concentrations of [Cu(SCN)]+, DAST and their flux density by changing angular speed of rotation of the rotating disk electrode. The switching has been found to occur at the concentration ratio [Cu(SCN)]+/DAST = ca. 31, above and below which are the loading diffusion and surface reaction limited, respectively [2].
[1] Y. Tsuda et al., Monatsh. Chem., 148, 845-854 (2017).
[2] Y. Tsuda et al., J. Electrochem. Soc., 166 (9) B3096-B3102 (2019).