In2Se3 semiconductor for efficient wireless communications
Abstract
Acoustic devices are popular as components in cellular communication transceivers due to their small size, low insertion loss, and high resonant frequencies. Presented are initial efforts to study a ferroelectric semiconductor, α-In2Se3, for use in acoustic devices. Discussed are a process for the exfoliation of α-In2Se3 flakes, followed by a bilayer lift-off process for patterning metal electrodes. The electrical properties of the exfoliated flakes will be characterized and integrated into surface acoustic wave devices to study acousto-electric interactions and model their potential for magnet-free RF circulators, enabling compact simultaneous transmit and receive radios.
Primary Faculty Mentor Name
Jackson Anderson
Status
Graduate
Student College
College of Engineering and Mathematical Sciences
Program/Major
Electrical Engineering
Primary Research Category
Engineering and Math Science
In2Se3 semiconductor for efficient wireless communications
Acoustic devices are popular as components in cellular communication transceivers due to their small size, low insertion loss, and high resonant frequencies. Presented are initial efforts to study a ferroelectric semiconductor, α-In2Se3, for use in acoustic devices. Discussed are a process for the exfoliation of α-In2Se3 flakes, followed by a bilayer lift-off process for patterning metal electrodes. The electrical properties of the exfoliated flakes will be characterized and integrated into surface acoustic wave devices to study acousto-electric interactions and model their potential for magnet-free RF circulators, enabling compact simultaneous transmit and receive radios.
