Development and characterization of thin film materials produced via atomic layer deposition
Abstract
Atomic Layer Deposition, (ALD), is a method for growing thin film materials with atomic scale precision. Sequential alternating pulses of metal organics and oxidation precursors enter a reaction chamber and form a film on the surface of a substrate. Using ALD, I produced and characterized thin films of Al2O3, SnO2, Nb2O5 and alloys of the latter two. I will discuss various temperature variations, oxidation precursors and their effect on the growth and optical characteristics of the aforementioned films. I will also evaluate the effect the alloyed SnO2 and Nb2O5 have on perovskite solar cell performance.
Primary Faculty Mentor Name
Alex Kozen
Status
Undergraduate
Student College
College of Engineering and Mathematical Sciences
Program/Major
Physics
Primary Research Category
Physical Science
Development and characterization of thin film materials produced via atomic layer deposition
Atomic Layer Deposition, (ALD), is a method for growing thin film materials with atomic scale precision. Sequential alternating pulses of metal organics and oxidation precursors enter a reaction chamber and form a film on the surface of a substrate. Using ALD, I produced and characterized thin films of Al2O3, SnO2, Nb2O5 and alloys of the latter two. I will discuss various temperature variations, oxidation precursors and their effect on the growth and optical characteristics of the aforementioned films. I will also evaluate the effect the alloyed SnO2 and Nb2O5 have on perovskite solar cell performance.
