Crystallization kinetics of SnO2:Nb2O5 thin films

Presenter's Name(s)

Elijah Burlinson

Abstract

Niobium oxide (NbOx) thin films have potential in the semiconductor industry as circuit element materials, for applications such as neuromorphic computing. To enable their integration into current fabrication processes, it is important to understand NbOx thin film properties. My project focuses on understanding the impact of alloying NbOx with SnO2 on crystallization kinetics. NbOx-SnO2 thin films are deposited onto silicon wafers using atomic layer deposition (ALD) and then annealed under various conditions. I then characterize these samples using a combination of Raman spectroscopy and optical analysis to evaluate crystallization kinetics and ultimately produce time-temperaturetransition (TTT) diagrams for this materials system.

Primary Faculty Mentor Name

Alexander Kozen

Status

Undergraduate

Student College

College of Arts and Sciences

Program/Major

Chemistry

Primary Research Category

Physical Science

Abstract only.

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Crystallization kinetics of SnO2:Nb2O5 thin films

Niobium oxide (NbOx) thin films have potential in the semiconductor industry as circuit element materials, for applications such as neuromorphic computing. To enable their integration into current fabrication processes, it is important to understand NbOx thin film properties. My project focuses on understanding the impact of alloying NbOx with SnO2 on crystallization kinetics. NbOx-SnO2 thin films are deposited onto silicon wafers using atomic layer deposition (ALD) and then annealed under various conditions. I then characterize these samples using a combination of Raman spectroscopy and optical analysis to evaluate crystallization kinetics and ultimately produce time-temperaturetransition (TTT) diagrams for this materials system.